SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
80
30
Power Dissipation (W)
I
D
- Drain Current (A)
60
20
40
10
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5/9
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