SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 10 thru 7
V
30
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 6
V
20
T
C
= 25 °C
6
10
T
C
= - 55 °C
8
4
T
C
= 125 °C
2
10
V
GS
= 4
V
0
0.0
V
GS
= 5
V
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.023
2500
Transfer Characteristics
r
DS(on)
- On-Resistance (Ω)
2000
0.022
V
GS
= 10
V
C - Capacitance (pF)
C
iss
1500
1000
0.021
500
C
rss
0.020
0
10
20
I
D
- Drain Current (A)
30
40
0
0
C
oss
20
40
60
80
100
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 12 A
V
GS
- Gate-to-Source
Voltage
(V)
8
r
DS(on)
- On-Resistance
V
DS
= 50
V
2.2
2.0
1.8
1.6
(Normalized)
1.4
1.2
1.0
0.8
0.6
0
0
5
10
15
20
25
30
35
0.4
- 50
I
D
= 12 A
Capacitance
V
GS
= 10
V
6
V
DS
=
80 V
4
2
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3/9
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