SUD19P06-60
P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
1.9
R
DS(on)
- On-Resistance (normalized)
I
D
= 10 A
1.6
V
GS
= 10
V
I S - Source Current (A)
10
1.3
T
J
= 150 °C
T
J
= 25 °C
1.0
0.7
0.4
- 50
1
- 25
0
25
50
75
100
125
150
0.0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
25
100
Limited
by
r
DS(on)
*
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
100 ms
1s
1
10 s
DC
0.1
BVDSS Limited
T
C
= 25 °C
Single Pulse
15
10
5
0.01
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.001
0.1
*
V
GS
1
10
100
1000
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
r
DS(on)
is specified
Maximum Drain Current
vs. Case Temperature
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square
Wave
Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/8
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
