SUD19P06-60
P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 10 thru 5
V
25
I
D
- Drain Current (A)
4
V
I
D
- Drain Current (A)
25
30
20
20
15
15
10
3
V
10
T
C
= 125 °C
5
25 °C
- 55 °C
5
0
0
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
35
30
g fs - Transconductance (S)
25
20
15
10
5
0
0
5
10
15
20
25
30
125 °C
T
C
= - 55 °C
25 °C
RDS(on) - On-Resistance (Ω)
0.12
Transfer Characteristics
0.10
0.08
V
GS
= 4.5
V
0.06
V
GS
= 10
V
0.04
0.02
0.00
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
GS
- Gate-to-Source
Voltage
(V)
Transconductance
1800
20
On-Resistance vs. Drain Current
V
GS - Gate-to-Source
Voltage
(V)
1500
C - Capacitance (pF)
C
iss
16
V
DS
= 30
V
I
D
= 10 A
1200
12
900
8
600
300
C
rss
0
10
4
C
oss
0
0
20
30
40
50
60
0
10
20
30
40
50
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3/8
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