SUD15N15-95
N-Channel
150 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C unless noted)
2.8
R DS(on)- On-Resistance (Normalized)
2.4
2.0
1.6
1.2
0.8
0.4
0.0
- 50
V
GS
= 10 V
I
D
= 15 A
I S - Source Current (A)
100
T
J
= 150 °C
10
T
J
= 25 °C
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
100
THERMAL RATINGS
20
15
I D - Drain Current (A)
I D - Drain Current (A)
10
Limited by R
DS(on)
*
10 µs
100 µs
10
1
T
C
= 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, DC
5
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
175
0.1
0.1
1
10
1000
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Maximum Avalanche Drain Current
vs. Case Temperature
2
1
Normalized Effective Transient
Thermal Impedance
Safe Operating Area
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
4/7
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