SUD15N15-95
N-Channel
150 V (D-S) 175 °C MOSFET
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 120 V, V
GS
= 0 V
V
DS
= 120 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 120 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 °C
V
GS
= 6 V, I
D
= 10 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Symbol
Test Conditions
Min.
150
2
Typ.
a
Max.
Unit
V
± 100
1
50
250
µA
A
0.077
0.095
0.190
0.250
0.081
25
900
0.100
S
Ω
nA
25
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
V
DS
= 15 V, I
D
= 15 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
115
70
20
25
pF
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
c
V
DS
= 75 V, V
GS
= 10 V, I
D
= 15 A
1
5.5
7
3.2
8
12
55
25
45
25
35
17
30
nC
Ω
V
DD
= 75 V, R
L
= 5
Ω
I
D
≅
15 A, V
GEN
= 10 V, R
G
= 2.5
Ω
ns
Source-Drain Diode Ratings and Characteristic
(T
C
= 25 °C)
A
V
ns
I
F
= 15 A, V
GS
= 0 V
I
F
= 15 A, dI/dt = 100 A/µs
0.9
55
1.5
85
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2/7
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