SUD09P10-195
P-Channel 100 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
V
GS
= 10 V thru 5 V
V
GS
= 4 V
R
DS(on)
- On-Resistance (Ω)
12
I
D
- Drain Current (A)
0.25
0.30
9
0.20
V
GS
= 4.5 V
V
GS
= 10 V
0.15
6
V
GS
= 3 V
3
0
0
1
2
3
4
0.10
0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Output Characteristics
2.0
0.60
On-Resistance vs. Drain Current
R
DS(on)
- On-Resistance (Ω)
1.6
I
D
- Drain Current (A)
0.45
T
J
= 150 °C
0.30
1.2
0.8
T
C
= 25 °C
0.4
T
C
= 125 °C
T
C
= - 55 °C
0.0
0
1
2
3
4
T
J
= 25 °C
0.15
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
25
10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 3.6 A
g
fs
- Transconductance (S)
20
T
C
= - 55 °C
15
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 50 V
6
V
DS
= 25 V
4
V
DS
= 80 V
2
10
T
C
= 125 °C
5
0
0
3
6
9
12
15
0
0
5
10
15
20
25
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
Transconductance
Gate Charge
3/6
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