SUD09P10-195 参数 Datasheet PDF下载

SUD09P10-195

P-Channel 100 V (D-S) MOSFET

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

a

Forward Transconductance

a

Dynamic

b

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

c

Gate-Source Charge

Gate-Drain Charge

c

Gate Resistance

Turn-On Delay

Rise Time

c

Turn-Off Delay Time

c

Fall Time

c

Time

c

c

Symbol

V

DS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

DS

= 0 V, I

D

= - 250 µA

V

DS

= V

GS

, I

D

= - 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= - 100 V, V

GS

= 0 V

V

DS

= - 100 V, V

GS

= 0 V, T

J

= 125 °C

V

DS

= - 100 V, V

GS

= 0 V, T

J

= 150 °C

V

DS

≤

- 10 V, V

GS

= - 10 V

V

GS

= - 10 V, I

D

= - 3.6 A

V

GS

= - 4.5 V, I

D

= - 3.4 A

V

DS

= - 15 V, I

D

= - 3.6 A

Min.

- 100

-1

Typ.

Max.

Unit

- 2.5

± 250

-1

- 50

- 250

V

nA

µA

A

- 15

0.162

0.175

12

0.195

0.210

Ω

S

1055

V

GS

= 0 V, V

DS

= - 50 V, f = 1 MHz

V

DS

= - 50 V, V

GS

= - 10 V, I

D

= - 3.6 A

V

DS

= - 50 V, V

GS

= - 4.5 V, I

D

= - 3.6 A

f = 1 MHz

V

DD

= - 50 V, R

L

= 17.2

Ω

I

D

≅

- 2.9 A, V

GEN

= - 10 V, R

g

= 1

Ω

1.2

65

41

23.2

11.7

3.5

4.8

5.7

7

12

33

9

11.5

14

18

50

18

ns

Ω

34.8

17.6

nC

pF

Drain-Source Body Diode Ratings and Characteristics

T

C

= 25 °C

b

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

I

F

= - 2.9 A, dI/dt = 100 A/µs

I

F

= - 2.9 A, V

GS

= 0 V

- 0.8

50

-4

98

- 8.8

- 15

- 1.5

75

-6

147

A

V

ns

A

nC

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

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