SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.5
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3 A
Source-Drain Diode Forward Voltage
10
r
DS(on)
−
On-Resiistance
(Normalized)
2.0
I S
−
Source Current (A)
1.5
T
J
= 175_C
1.0
T
J
= 25_C
0.5
0.0
−50
−25
0
25
50
75 100 125
T
J
−
Junction Temperature (_C)
150
175
1
0
0.2
0.4
0.6
0.8
1.0
V
SD
−
Source-to-Drain Voltage (V)
1.2
THERMAL RATINGS
Maximum Avalanche Drain Current vs. Case Temperature
8
10
Safe Operating Area
10
ms
*Limited by r
DS(on)
6
I D
−
Drain Current (A)
I D
−
Drain Current (A)
100
ms
4
1
1 ms
2
T
C
= 25_C
Single Pulse
10 ms
0
0
25
50
75
100
125
150
175
T
C
−
Case Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
100 ms
1 s, dc
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
*V
GS
u
minimum V
GS
at which r
DS(on)
is specified
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−5
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
100
4/5
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