SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistancevs. Junction Temperature
2.5
10
V
D
= 10 V
GS
I
= 3 A
2.0
1.5
1.0
0.5
0.0
T = 175_C
J
T = 25_C
J
1
0
0.2
0.4
0.6
0.8
1.0
1.2
−50 −25
0
25
50
75 100 125 150 175
T
− Junction Temperature (_C)
V
SD
− Source-to-Drain Voltage (V)
J
THERMAL RATINGS
Maximum Avalanche Drain Current vs. Case Temperature
Safe Operating Area
8
10
10 ms
*Limited by r
DS(on)
6
4
2
0
100 ms
1
1 ms
10 ms
T
= 25_C
C
Single Pulse
100 ms
1 s, dc
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
*V u minimum V at which r is specified
DS(on)
T
− Case Temperature (_C)
C
GS
GS
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
100
Square Wave Pulse Duration (sec)
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