SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 100 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
b
I
DSS
I
D(on)
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3 A
Drain-Source On-State
Drain Source On State Resistance
b
r
DS( )
DS(on)
V
GS
= 10 V, I
D
= 3 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 3 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 1.0 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3 A
0.180
8.5
8.0
0.160
0.200
0.350
0.450
0.225
S
W
100
1.0
3.0
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 7.5
W
I
D
^
6.5 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 50 V, V
GS
= 5 V, I
D
= 6.5 A
,
,
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
240
42
17
2.7
0.6
0.7
7
8
8
9
11
12
12
14
ns
4.0
nC
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 6.5 A, V
GS
= 0 V
I
F
= 6.5 A, di/dt = 100 A/ms
0.9
35
8.0
1.3
60
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2/5
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