SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.3
R
DS(on)
- On-Resistance (Normalized)
100
I
D
= 24 A
2.0
I
S
- Source Current (A)
10
T
J
= 150 °C
1
1.7
V
GS
= 10 V
1.4
0.1
T
J
= 25 °C
1.1
0.8
0.01
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
T
J
- Junction Temperature (°C)
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain
Voltage
(V)
1.2
On-Resistance vs. Junction Temperature
0.10
1.1
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.08
V
GS(th)
Variance (V)
0.8
I
D
= 250 μA
0.06
0.5
I
D
= 5 mA
0.2
0.04
0.02
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
- 0.1
0
- 0.4
- 50
- 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
- 45
I
D
= 10 mA
V
DS
- Drain-to-Source
Voltage
(V)
- 47
- 49
- 51
- 53
- 55
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
4/7
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