SQD90P04-9m4L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 5 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
80
60
V
GS
= 4 V
60
40
40
T
C
= 25 °C
20
T
C
= 125 °C
0
T
C
= - 55 °C
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
20
V
GS
= 3 V
V
GS
= 2 V, 1 V
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
15
Output Characteristics
100
0.05
Transfer Characteristics
g
fs
- Transconductance (S)
80
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
T
C
= 25 °C
60
0.04
0.03
40
T
C
= 125 °C
20
0.02
V
GS
= 4.5 V
0.01
V
GS
= 10 V
0
0
16
32
48
I
D
- Drain Current (A)
64
80
0.00
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
8000
7000
6000
C - Capacitance (pF)
10
On-Resistance vs. Drain Current
C
iss
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 50 A
V
DS
= 20 V
5000
4000
3000
2000
1000
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
35
40
6
4
C
oss
C
rss
2
0
0
20
40
60
80
100
120
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
3/7
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