SQ4850EY
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 6 A
2.1
V
GS
= 10
V
1.7
I
S
- Source Current (A)
10
T
J
= 150 °C
1
T
J
= 25 °C
0.1
100
1.3
0.9
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
175
0.001
0.0
0.2
T
J
- Junction Temperature (°C)
1.0
0.4
0.6
0.8
V
SD
- Source-to-Drain
Voltage
(V)
1.2
On-Resistance vs. Junction Temperature
0.15
0.6
Source Drain Diode Forward Voltage
0.3
R
DS(on)
- On-Resistance (Ω)
0.12
V
GS(th)
Variance
(V)
0
0.09
- 0.3
I
D
= 5 mA
- 0.6
I
D
= 250 µA
- 0.9
0.06
T
J
= 125 °C
0.03
T
J
= 25 °C
0.00
0
1
2
3
4
5
6
7
8
V
GS
- Gate-to-Source
Voltage
(V)
9
10
- 1.2
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
75
I
D
= 1 mA
V
DS
- Drain-to-Source
Voltage
(V)
72
Threshold Voltage
69
66
63
60
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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