SQ4850EY
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
V
GS
= 10
V
thru 5
V
32
I
D
- Drain Current (A)
V
GS
= 4
V
I
D
- Drain Current (A)
40
32
24
24
16
16
T
C
= 25 °C
8
8
V
GS
= 3
V
0
0
2
4
6
8
V
DS
- Drain-to-Source
Voltage
(V)
10
T
C
= 125 °C
0
0
T
C
= - 55 °C
1
2
3
4
V
GS
- Gate-to-Source
Voltage
(V)
5
Output Characteristics
Transfer Characteristics
50
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
0.10
40
T
C
= 25 °C
30
0.08
0.06
20
T
C
= 125 °C
10
0.04
V
GS
= 4.5
V
0.02
V
GS
= 10
V
0
0
5
10
15
I
D
- Drain Current (A)
20
25
0.00
0
8
16
24
I
D
- Drain Current (A)
32
40
Transconductance
On-Resistance vs. Drain Current
1500
10
I
D
= 6 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 30
V
6
C - Capacitance (pF)
C
iss
1000
4
500
C
oss
C
rss
2
0
0
0
10
20
30
40
50
V
DS
- Drain-to-Source
Voltage
(V)
60
0
5
10
15
Q
g
- Total Gate Charge (nC)
20
Capacitance
Gate Charge
3 / 10
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