SQ3442EV
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
6
1.7
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
5
I
D
= 4 A
V
DS
= 10 V
I
D
= 4 A
1.5
V
GS
= 4.5 V
4
V
GS
= 2.5 V
1.3
3
1.1
2
1
0.9
0
0
1
2
3
4
Q
g
- Total
Gate
Charge (nC)
5
6
0.7
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
On-Resistance vs. Junction Temperature
0.25
10
I
S
-
Source
Current (A)
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.20
1
0.15
0.1
T
J
= 25
°C
0.10
T
J
= 150
°C
0.01
0.05
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
V
SD
-
Source-to-Drain
Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
28
0.2
I
D
= 250 μA
V
DS
- Drain-to-Source Voltage (V)
27
I
D
= 1 mA
0.0
I
D
= 5 mA
V
GS(th)
Variance (V)
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25
26
25
24
23
0
25
50
75
100
125
150
175
22
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
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