欢迎访问ic37.com |
会员登录 免费注册
发布采购

SQ3442EV 参数 Datasheet PDF下载

SQ3442EV图片预览
型号: SQ3442EV
PDF下载: 下载PDF文件 查看货源
内容描述: 汽车N沟道20 V (D -S ), 175 ℃的MOSFET [Automotive N-Channel 20 V (D-S) 175 °C MOSFET]
分类和应用:
文件页数/大小: 11 页 / 931 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
 浏览型号SQ3442EV的Datasheet PDF文件第1页浏览型号SQ3442EV的Datasheet PDF文件第3页浏览型号SQ3442EV的Datasheet PDF文件第4页浏览型号SQ3442EV的Datasheet PDF文件第5页浏览型号SQ3442EV的Datasheet PDF文件第6页浏览型号SQ3442EV的Datasheet PDF文件第7页浏览型号SQ3442EV的Datasheet PDF文件第8页浏览型号SQ3442EV的Datasheet PDF文件第9页  
SQ3442EV
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 4.5 V
V
GS
= 4.5 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 1.6 A, V
GS
= 0
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
GS
= 4.5 V
V
DS
= 10 V, I
D
= 4 A
V
GS
= 0 V
V
DS
= 10 V, f = 1 MHz
-
-
-
-
-
-
0.9
-
-
-
-
-
-
323
71
45
3.5
0.6
0.8
1.85
5
15
14
6
-
0.75
405
90
60
5.5
-
-
2.8
8
23
21
9
17
1.2
A
V
ns
nC
pF
g
fs
V
DS
= 20 V
V
DS
= 20 V, T
J
= 125 °C
V
DS
= 20 V, T
J
= 175 °C
V
DS
5
V
I
D
= 4 A
I
D
= 4 A, T
J
= 125 °C
I
D
= 4 A, T
J
= 175 °C
I
D
= 3.4 A
20
0.6
-
-
-
-
10
-
-
-
-
-
-
1
-
-
-
-
-
0.044
-
-
0.060
14
-
1.6
± 100
1
50
150
-
0.055
0.080
0.094
0.085
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 4 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2 / 11
www.freescale.net.cn