SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
600
10
V
DS
= 30 V
I
D
= 2 A
V
GS
-
Gate-to-Source
Voltage (V)
8
500
C - Capacitance (pF)
400
C
iss
6
300
4
200
C
oss
C
rss
100
2
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
0
0
2
4
6
8
10
Q
g
- Total
Gate
Charge (nC)
Capacitance
2.5
Gate Charge
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1.5 A
2.1
V
GS
= 10
V
I
S
- Source Current (A)
1
T
J
= 25 °C
0.1
T
J
= 150 °C
1.7
1.3
0.01
0.9
0.5
- 50
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0.001
0.0
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain
Voltage
(V)
1.5
On-Resistance vs. Junction Temperature
0.5
0.5
Source-Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.4
V
GS(th)
Variance
(V)
0.2
0.3
- 0.1
0.2
T
J
= 125 °C
0.1
T
J
= 25 °C
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
- 0.4
I
D
= 250 µA
- 0.7
I
D
= 5 mA
- 1.0
- 50
- 25
0
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
4 / 10
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
