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SQ2360EES 参数 Datasheet PDF下载

SQ2360EES图片预览
型号: SQ2360EES
PDF下载: 下载PDF文件 查看货源
内容描述: 汽车N沟道60 V (D -S ), 175 ℃的MOSFET [Automotive N-Channel 60 V (D-S) 175 °C MOSFET]
分类和应用:
文件页数/大小: 10 页 / 849 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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SQ2360EES
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
0.005
10
-2
0.004
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
10
-4
0.003
T
J
= 25 °C
0.002
T
J
= 150 °C
10
-6
T
J
= 25 °C
10
-8
0.001
0.000
0
6
12
18
24
V
GS
- Gate-to-Source
Voltage
(V)
30
10
-10
0
6
12
18
24
V
GS
- Gate-to-Source
Voltage
(V)
30
Gate Current vs. Gate-Source Voltage
12
V
GS
= 10
V
thru 5
V
10
V
GS
= 4
V
I
D
- Drain Current (A)
8
I
D
- Drain Current (A)
8
10
12
Gate Current vs. Gate-Source Voltage
6
6
4
4
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
2
V
GS
= 3
V
2
0
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
0
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
10
0.25
Transfer Characteristics
g
fs
- Transconductance (S)
T
C
= - 55 °C
6
T
C
= 25 °C
4
T
C
= 125 °C
2
R
DS(on)
- On-Resistance (Ω)
8
0.20
0.15
0.10
V
GS
= 4.5
V
V
GS
= 10
V
0.05
0
0.0
0.00
0.4
0.8
1.2
1.6
2.0
0
2
I
D
- Drain Current (A)
4
6
8
I
D
- Drain Current (A)
10
12
Transconductance
On-Resistance vs. Drain Current
3 / 10
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