SiHD7N60E
E Series Power MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
I
D
, Drain-to-Source Current (A)
R
DS(on)
, Drain-to-Source
On Resistance (Normalized)
16
12
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
TOP
3
T
J
= 25 °C
2.5
2
1.5
1
0.5
0
- 60 - 40 - 20 0
I
D
= 3.5 A
V
GS
= 10 V
8
4
0
0
5
10
15
20
25
30
20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
T
J
, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
12
I
D
, Drain-to-Source Current (A)
Capacitance (pF)
9
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
TOP
T
J
= 150 °C
10 000
1000
C
oss
100
C
iss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
6
3
10
C
rss
0
0
5
10
15
20
25
30
1
0
100
200
300
400
500
600
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
T
J
= 25 °C
24
V
GS
,
Gate-to-Source
Voltage (V)
I
D
, Drain-to-Source Current (A)
16
20
16
12
8
4
0
V
DS
= 480 V
V
DS
= 300 V
V
DS
= 120 V
12
T
J
= 150 °C
8
4
0
0
5
10
15
20
25
0
10
20
30
40
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Q
g
, Total
Gate
Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3/9
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