SiHD7N60E
E Series Power MOSFET
FEATURES
•
•
•
•
•
•
Low Figure-of-Merit (FOM) R
on
x Q
g
Low Input Capacitance (C
iss
)
Reduced Switching and Conduction Losses
Ultra Low Gate Charge (Q
g
)
Avalanche Energy Rated (UIS)
Material categorization: For definitions of
compliance please see
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PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
max. at 25 °C (Ω)
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
40
5
9
Single
650
0.6
APPLICATIONS
Server and Telecom Power Supplies
Switch Mode Power Supplies (SMPS)
Power Factor Correction Power Supplies (PFC)
Lighting
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- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
•
•
•
•
D
DPAK
(TO-252)
D
G
G
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
SiHD7N60E-GE3
Lead (Pb)-free and Halogen-free
SiHD7N60ET-GE3
SiHD7N60ETR-GE3
SiHD7N60ETL-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode
dV/dt
d
T
J
= 125 °C
E
AS
P
D
T
J
, T
stg
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 20
30
7
5
18
0.63
43
78
- 55 to + 150
37
3
300
c
W/°C
mJ
W
°C
V/ns
°C
A
V
UNIT
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 13.8 mH, R
g
= 25
Ω,
I
AS
= 2.5 A.
c. 1.6 mm from case.
d. I
SD
≤
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
1/9
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
