SiHD3N50D
D Series Power MOSFET
100
3.0
2.5
10
T
J
= 150 °C
I
SD
, Reverse Drain Current (A)
I
D
, Drain Current (A)
2.0
1.5
1.0
0.5
1
T
J
= 25 °C
0.1
V
GS
= 0 V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
25
50
75
100
125
150
V
SD
,
Source-Drain
Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
T
J
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
100
Operation in this area
limited by R
DS(on)
I
D
, Drain Current (A)
10
100 μs
1
Limited by R
DS(on)
*
0.1
T
C
= 25 °C
T
J
= 150 °C
Single
Pulse
1
1 ms
10 ms
625
600
575
550
525
500
BVDSS Limited
475
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
0.01
V
DS
, Drain-to-Source
Brakdown Voltage (V)
T
J
, Junction Temperature (°C)
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
Fig. 8 - Maximum Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single
Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
4/9
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