SiHD3N50D
D Series Power MOSFET
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
62
1.8
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related
b
Effective Output Capacitance, Time
Related
c
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
P - N junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
o(er)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 2.5 A
V
DS
= 8 V, I
D
= 1.5 A
MIN.
500
-
3
-
-
-
-
-
-
-
-
-
TYP.
-
0.56
-
-
-
-
2.6
1
175
21
5
21
26
6
2
3
12
9
11
13
3.3
MAX.
-
-
5
± 100
1
10
3.2
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
pF
-
-
12
-
-
24
18
22
26
-
ns
nC
V
DS
= 0 V to 400 V, V
GS
= 0 V
C
o(tr)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
f = 1 MHz, open drain
V
DD
= 400 V, I
D
= 1.5 A
R
g
= 9.1
,
V
GS
= 10 V
V
GS
= 10 V
I
D
= 1.5 A, V
DS
= 400 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
293
0.74
5
3
A
12
1.2
-
-
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 1.5 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
= 1.5 A,
dI/dt = 100 A/μs, V
R
= 20 V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
c. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
2/9
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