IRFR/U2405
IRFR/U2405
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
55
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.052 ––– V/°C Reference to 25°C, I
D
= 1mA
0.0118 0.016
Ω
V
GS
= 10V, I
D
= 34A
––– 4.0
V
V
DS
= 10V, I
D
= 250µA
––– –––
S
V
DS
= 25V, I
D
= 34A
––– 20
V
DS
= 55V, V
GS
= 0V
µA
––– 250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
––– 200
V
GS
= 20V
nA
––– -200
V
GS
= -20V
70 110
I
D
= 34A
16
23
nC
V
DS
= 44V
19
29
V
GS
= 10V
15 –––
V
DD
= 28V
130 –––
I
D
= 34A
ns
55 –––
R
G
= 6.8Ω
78 –––
V
GS
= 10V
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
S
2430 –––
V
GS
= 0V
470 –––
pF
V
DS
= 25V
100 –––
ƒ = 1.0MHz, See Fig. 5
2040 –––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
350 –––
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
350 –––
V
GS
= 0V, V
DS
= 0V to 44V
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 56
showing the
A
G
integral reverse
––– ––– 220
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
––– 62
93
ns
T
J
= 25°C, I
F
= 34A
––– 170 260
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.22mH
R
G
= 25Ω, I
AS
= 34A.
I
SD
≤
34A, di/dt
≤
190A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
2 / 10
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