IRFR18N15D/IRFU18N15D
20
10000
I
D
= 11A
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds
gd
16
C, Capacitance(pF)
1000
Ciss
12
Coss
100
8
Crss
4
10
1
10
100
1000
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
10
T
J
= 175
°
C
T
J
= 25
°
C
1
I
D
, Drain Current (A)
100
10us
10
100us
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
100
1ms
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 10
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