IRFR18N15D/IRFU18N15D
SMPS MOSFET
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
V
DSS
150V
R
DS(on)
max
0.125Ω
I
D
18A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
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Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
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Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR18N15D
I-Pak
IRFU18N15D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
18
13
72
110
0.71
± 30
3.3
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
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Telecom 48V input DC-DC Active Clamp Reset Forward Converter
1 / 10
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
