IRF/B/S/SL4310
1000.0
10000
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100.0
100
100µsec
10.0
TJ = 25°C
1.0
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
DC
100
1000
0.1
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
140
LIMITED BY PACKAGE
120
ID , Drain Current (A)
Fig 8.
Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
120
100
80
60
40
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
115
110
105
100
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
4.0
3.5
3.0
Fig 10.
Drain-to-Source Breakdown Voltage
2400
2000
I D
TOP
12A
17A
BOTTOM
75A
1600
Energy (µJ)
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
120
1200
800
400
0
25
50
75
100
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy Vs. DrainCurrent
4 / 11
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