IRF/B/S/SL4310
1000
100
10
1000
100
10
VGS
15V
10V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
BOTTOM
BOTTOM
4.5V
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
4.5V
1
1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
10
I
= 75A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
= 50V
J
V
DS
≤ 60µs PULSE WIDTH
1
3.0
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
12000
10000
8000
6000
4000
2000
0
20
V
= 0V,
f = 1 MHZ
GS
I = 75A
D
C
= C + C , C SHORTED
iss
gs
gd ds
V
= 80V
DS
C
= C
rss
gd
16
12
8
VDS= 50V
VDS= 20V
C
= C + C
ds
oss
gd
Ciss
4
Coss
Crss
0
0
40
80
120 160 200 240 280
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3 / 11
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