IRF2807
7000
6000
5000
4000
3000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
I
D
= 43A
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
V
GS
, Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
Ciss
12
Coss
2000
1000
0
1
10
100
8
Crss
4
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 175
°
C
ID , Drain-to-Source Current (A)
100
100µsec
10
T
J
= 25
°
C
1
10
1msec
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
10
10msec
100
1000
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4/7
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