IRF2807
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
75
–––
–––
2.0
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
13
mΩ V
GS
= 10V, I
D
= 43A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 43A
25
V
DS
= 75V, V
GS
= 0V
µA
250
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
160
I
D
= 43A
29
nC V
DS
= 60V
55
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 38V
–––
I
D
= 43A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3820 –––
V
GS
= 0V
610 –––
V
DS
= 25V
130 –––
pF
ƒ = 1.0MHz, See Fig. 5
1280
340 mJ I
AS
= 50A, L = 370µH
Typ.
–––
0.074
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
64
49
48
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 82
showing the
A
G
integral reverse
––– ––– 280
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 43A, V
GS
= 0V
––– 100 150
ns
T
J
= 25°C, I
F
= 43A
––– 410 610
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Starting T
J
= 25°C, L = 370µH
R
G
= 25Ω, I
AS
= 43A, V
GS
=10V (See Figure 12)
I
SD
≤
43A, di/dt
≤
300A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
2/7
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