AOT9N50/AOTF9N50
500V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=400V
I
D
=9A
1000
Capacitance (pF)
V
GS
(Volts)
9
C
oss
100
10000
C
iss
12
6
10
3
C
rss
1
0
5
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
35
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
0
100
10µs
10
I
D
(Amps)
R
DS(ON)
limited
100
10
I
D
(Amps)
100µs
1ms
10ms
R
DS(ON)
limited
10µs
100µs
1ms
10ms
DC
0.1s
1s
1
1
0.1
T
J(Max)
=150°
C
T
C
=25°
C
0.01
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT9N50 (Note F)
100
DC
0.1
T
J(Max)
=150°
C
T
C
=25°
C
0.01
1000
1
10
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF9N50 (Note F)
100
1000
10
8
Current rating I
D
(A)
6
4
2
0
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 11: Current De-rating (Note B)
4/6
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