AOT9N50/AOTF9N50
500V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
10V
15
6.5V
12
I
D
(A)
6V
9
6
V
GS
=5.5V
3
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
2.0
3
2.5
2
1.5
1
0.5
0
-100
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
-50
0
50
100
150
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
I
S
(A)
1.0E+00
40
125°
C
1.0E-01
1.0E-02
1.0E-03
0.9
1.0E-04
0.8
-100
-50
0
50
100
150
200
T
J
(°
C)
Figure 5:Break Down vs. Junction Temparature
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°
C
1
0.1
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
125°
C
1
25°
C
10
V
DS
=40V
100
-55°
C
Normalized On-Resistance
1.5
R
DS(ON)
(
Ω
)
V
GS
=10V
I
D
=4.5A
1.0
0.5
V
GS
=10V
0.0
0
4
8
12
16
20
3/6
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