AOT8N80/AOTF8N80
800V, 7.4A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=640V
I
D
=8A
1000
Capacitance (pF)
V
GS
(Volts)
9
C
oss
100
C
rss
10
3
10000
C
iss
12
6
0
0
16
24
32
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
8
40
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
100
100
10
R
DS(ON)
limited
10µs
10
I
D
(Amps)
R
DS(ON)
limited
10µs
100µs
I
D
(Amps)
100µs
1
DC
1ms
10ms
1
DC
1ms
10ms
0.1s
1s
0.1
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N80 (Note F)
10
1000
0.01
1
T
J(Max)
=150°C
T
C
=25°C
10
V
DS
(Volts)
100
1000
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N80 (Note F)
10
8
Current rating I
D
(A)
6
4
2
0
0
75
100
125
T
CASE
(°
C)
Figure 11: Current De-rating (Note B)
25
50
150
4/6
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