AOT8N80/AOTF8N80
800V, 7.4A N-Channel MOSFET
General Description
The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability these parts can be adopted quickly into new and
existing offline power supply designs.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
900V@150℃
7.4A
< 1.63Ω
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOT8N80
800
±30
7.4
4.6
26
3.8
217
433
5
245
2.0
-55 to 150
300
AOT8N80
65
0.5
0.51
AOTF8N80
Units
V
V
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
7.4*
4.6*
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
AOTF8N80
65
--
2.5
Units
°C/W
°C/W
°C/W
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A
50
0.4
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
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