AOT8N65/AOTF8N65
600V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=520V
I
D
=8A
Capacitance (pF)
10000
C
iss
1000
C
oss
100
12
V
GS
(Volts)
9
6
10
3
C
rss
1
0
5
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
35
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
0
100
100
10µs
10
I
D
(Amps)
1
1ms
10ms
I
D
(Amps)
R
DS(ON)
limited
10µs
100µ
10
R
DS(ON)
limited
100µs
1ms
10ms
0.1s
1s
1
DC
0.1
DC
T
J(Max)
=150°C
T
C
=25°C
0.1
T
J(Max)
=150°
C
T
C
=25°
C
0.01
0.01
1
10
100
1000
1
10
V
DS
(Volts)
100
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT8N65 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF8N65 (Note F)
10
8
Current rating I
D
(A)
6
4
2
0
0
25
50
75
100
125
150
T
CASE
(°
C)
Figure 11: Current De-rating (Note B)
4/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
