AOT8N65/AOTF8N65
600V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
10V
12
10
10
I
D
(A)
I
D
(A)
8
6
4
V
GS
=5.5V
2
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.8
3
Normalized On-Resistance
2.5
2
1.5
1
0.5
0
-100
-50
0
50
100
150
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
I
S
(A)
1.0E+00
1.0E-01
1.0E-02
0.9
1.0E-03
1.0E-04
0.8
-100
-50
0
50
o
6.5V
100
V
DS
=40V
-55°
C
6V
125°
C
1
25°
C
0.1
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.5
V
GS
=10V
R
DS(ON)
(
Ω
)
1.2
V
GS
=10V
I
D
=4A
0.9
0.6
0.3
0
2
4
6
8
10
12
14
16
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
125°
C
25°
C
1
2.2
1.0E-05
100
150
200
0.0
T
J
( C)
Figure 5: Break Down vs. Junction Temperature
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.2
3/6
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