AOT500L
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
6000
5000
4000
3000
2000
1000
0
10
8
VDS=30V
ID=30A
Ciss
6
4
VGS=10V, ID=30A
Crss
Coss
2
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
70
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100
10
10000
1000
100
TJ(Max)=175°C
TA=25°C
10µs
RDS(ON)
100µs
20
48
30
10
26
63
40
13
1ms
10ms
TJ(Max)=175°C
TC=25°C
DC
1
0.00001 0.0001 0.001
0.01
0.1
1
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.3°C/W
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
4/7
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