AOT500L
N-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=10mA, VGS=0V
ID=1A, VGS=0V
BVDSS(z) Drain-Source Breakdown Voltage
BVCLAMP Drain-Source Clamping Voltage
33
36
V
V
44
30
IDSS(z)
BVGSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Voltage
VDS=16V, VGS=0V
µA
V
VDS=0V, ID=250µA
VDS=0V, VGS=±10V
VDS=VGS, ID=250µA
20
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
3
µΑ
V
VGS(th)
ID(ON)
1.5
2
V
GS=10V, VDS=5V
250
A
VGS=10V, ID=30A
4.1
6.2
95
5.3
RDS(ON)
Static Drain-Source On-Resistance
mΩ
TJ=125°C
VDS=5V, ID=30A
IS=1A, VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.7
1
Maximum Body-Diode Continuous Current
80
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4200
765
340
13
5500
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
30
89
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
69
34
12
15
25
35
150
62
60
84
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=30A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS=10V, VDS=15V, RL=0.5Ω,
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=30A, dI/dt=100A/µs
IF=30A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
78
ns
Qrr
nC
A: The value of R θJA is measured with the device in a still air environment with TA =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. EAR and IAR are based on a 100uH inductor with Tj(start) = 25C for each pulse.
Rev 2: Dec 2010
11
2/7
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