AOT4S60/AOB4S60/AOTF4S60
600V 4A
α
MOS
TM
Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
3
1.0E-04
1.0E-05
0.0
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
0.2
0
0
2
4
6
8
10
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
V
GS
(Volts)
25°C
9
125°C
15
12
V
DS
=480V
I
D
=2A
6
10000
3.0
2.5
Eoss(uJ)
2.0
1.5
1.0
C
rss
E
oss
1000
Capacitance (pF)
C
iss
100
C
oss
10
1
0.5
0.0
0
200
300
400
500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
100
600
0
100
200
300
400
V
DS
(Volts)
Figure 10: Coss stored Energy
500
600
0
100
100
10
I
D
(Amps)
I
D
(Amps)
R
DS(ON)
limited
10µs
100µs
1ms
DC
10
R
DS(ON)
limited
1
10µs
100µs
1ms
1
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)4S60 (Note F)
100
10ms
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
DC
10ms
0.1s
1s
1000
0.1
1
10
V
DS
(Volts)
100
1000
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF4S60(Note F)
4/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
