AOT4S60/AOB4S60/AOTF4S60
600V 4A
α
MOS
TM
Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10V
8
7V
6
6V
I
D
(A)
4
5.5V
2
5V
0
0
5
10
15
20
0
5
10
15
20
V
DS
(Volts)
Figure 2: On-Region Characteristics@125°C
5V
V
GS
=4.5V
0
V
DS
(Volts)
Figure 1: On-Region Characteristics@25°C
8
10V
7V
6V
6
I
D
(A)
4
V
GS
=4.5V
5.5V
2
100
V
DS
=20V
10
125°C
R
DS(ON)
(
Ω
)
I
D
(A)
1
25°C
0.1
-55°C
1.8
1.5
1.2
V
GS
=10V
0.9
0.6
0.3
0.01
2
4
6
8
10
V
GS
(Volts)
Figure 3: Transfer Characteristics
0.0
0
2
4
6
8
10
I
D
(A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
1.2
3
Normalized On-Resistance
2.5
2
1.5
1
0.5
0
-100
BV
DSS
(Normalized)
V
GS
=10V
I
D
=2A
1.1
1
0.9
-50
0
50
100
150
200
0.8
-100
-50
0
50
o
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
T
J
( C)
Figure 6: Break Down vs. Junction Temperature
3/6
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