AOT480L/AOB480L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
240
di/dt=800A/µs
200
34
Q
rr
(nC)
I
rm
(A)
t
rr
(ns)
Q
rr
160
25ºC
125ºC
120
I
rm
25ºC
80
0
5
10
15
20
25
30
10
2
26
18
125ºC
50
42
36
32
28
24
20
16
12
8
4
0
5
10
15
20
25
30
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
50
I
s
=20A
125ºC
30
160
Q
rr
(nC)
t
rr
(ns)
I
rm
(A)
30
20
25ºC
10
125º
0
0
200
400
600
800
1000
di/dt (A/µs)
µ
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
0
1000
S
0.5
S
t
rr
1
120
80
40
I
rm
0
Q
rr
25ºC
125ºC
25ºC
10
20
40
125ºC
1.5
25ºC
2
0
S
125ºC
1
t
rr
25ºC
0.5
di/dt=800A/µs
125ºC
1.5
I
S
(A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
240
I
s
=20A
200
40
6/7
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S
25ºC
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
