AOT480L/AOB480L
80V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=20V
I
D
=20A
8
Capacitance (pF)
9000
8000
7000
6000
5000
4000
3000
2000
C
oss
1000
0
0
60
80
100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
40
120
0
0
40
60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
80
C
rss
C
iss
V
GS
(Volts)
6
4
2
1000.0
5000
10µs
100.0
R
DS(ON)
limited
10µs
100µs
Power (W)
4000
3000
2000
1000
0
T
J(Max)
=175°
C
T
C
=25°
C
I
D
(Amps)
10.0
DC
1.0
0.1
0.0
0.01
0.1
1
10
V
DS
(Volts)
1ms
10ms
T
J(Max)
=175°C
T
C
=25°C
17
5
2
10
100
1000
1E-05 0.0001 0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0
18
10
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.45°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
P
D
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
T
on
T
4/7
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