AOT430
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250
10V
200
8V
6V
150
I
D
(A)
I
D
(A)
60
125°C
40
25°C
50
V
GS
=4.5V
0
0
2
4
6
8
10
V
DS
(Volts)
Figure 1: On-Region Characteristics
13
12
11
R
DS(ON)
(m
Ω
)
10
V
GS
=10V
9
8
7
6
0
20
40
60
80
100
0.6
-50
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
I
D
=30A
25
20
R
DS(ON)
(m
Ω
)
15
10
25°C
5
1.0E-04
0
4
8
12
16
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
0
3
3.5
4
4.5
5
5.5
6
20
-40°C
5.5V
80
V
DS
=5V
100
100
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
1.8
1.6
1.4
1.2
1
0.8
V
GS
=10V, 30A
1.0E+02
1.0E+01
125°C
1.0E+00
125°C
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
-40°C
25°C
3/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
