AOT430 参数 Datasheet PDF下载

AOT430

N-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Conditions

I

D

=250uA, V

GS

=0V

V

DS

=60V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±25V

V

DS

=V

GS

, I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=30A

T

J

=125°C

2

200

9.8

16.0

90

0.7

1

80

4700

V

GS

=0V, V

DS

=30V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

400

180

3

114

V

GS

=10V, V

DS

=30V, I

D

=30A

33

18

21

V

GS

=10V, V

DS

=30V, R

L

=1Ω,

R

GEN

=3Ω

I

F

=30A, dI/dt=100A/µs

39

70

24

53

143

11.5

19.0

2.7

Min

75

1

5

1

4

Typ

Max

Units

V

µA

uA

V

A

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

V

DS

=5V, I

D

=80A

Transconductance

Diode Forward Voltage

I

S

=1A, V

GS

=0V

Maximum Body-Diode Continuous Current

G

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

gs

Gate Source Charge

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=30A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device in a still air environment with T

A

=25°C.

B. The power dissipation P

D

is based on T

J(MAX)

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=175°C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)

=175°C.

G. The maximum current rating is limited by bond-wires.

Rev2:

Feb

2007

2/5

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