AOT414
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
di/dt=800A/µs
250
200
I
rm
150
100
Q
rr
50
0
5
10
15
20
25
30
25ºC
0
125ºC
125ºC
15
12
9
6
3
24
125ºC
20
16
Q
rr
(nC)
25ºC
t
rr
(ns)
I
rm
(A)
di/dt=800A/µs
1.6
1.2
0.8
8
S
4
0
0
5
10
15
25ºC
20
25
30
125ºC
0.4
0
2
I
S
(A)
-RoHS Compliant
Figure 17: Diode Reverse Recovery Charge and Peak
-Halogen Free
Current vs. Conduction Current
150
I
s
=20A
120
90
60
30
I
rm
0
0
200
400
600
800
Q
rr
125ºC
30
26
22
18
14
125ºC
25ºC
10
6
2
-2
1000
di/dt (A/µs)
µ
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
5
I
rm
(A)
25ºC
20
t
rr
(ns)
30
25
I
S
(A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
5
125ºC
I
s
=20A
4.5
4
3.5
25ºC
t
rr
3
2
25ºC
125ºC
S
0
0
200
400
600
800
di/dt (A/µs)
µ
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
1.5
1
0.5
0
1000
S
2.5
Q
rr
(nC)
15
10
6/7
www.freescale.net.cn
S
12
t
rr
25ºC
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
