AOT414
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=20A
Capacitance (pF)
2500
8
2000
C
iss
1500
V
GS
(Volts)
6
4
1000
C
oss
500
C
rss
2
0
0
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
30
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
1000
10µs
T
J(Max)
=175°C
T
A
=25°C
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
V
DS
(Volts)
10
10µs
Power (W)
R
DS(ON)
100µs
DC
1ms
10ms
700
400
17
5
2
10
T
J(Max)
=175°C
T
A
=25°C
100
100
0.0001
0.001
0.01
0.1
1
0
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.3°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/7
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
