AOT12N60FD/AOTF12N60FD
600V, 12A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
24
10V
20
16
I
D
(A)
12
8
4
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.2
Normalized On-Resistance
V
GS
=10V
0.9
R
DS(ON)
(
Ω
)
3
2.5
2
1.5
1
0.5
0
-100
0.1
2
6
8
V
GS
(Volts)
Figure 2: Transfer Characteristics
4
10
I
D
(A)
V
GS
=5.5V
6V
10
125°C
6.5V
100
V
DS
=40V
-55°C
1
25°C
V
GS
=10V
I
D
=6A
0.6
0.3
0.0
0
4
8
12
16
20
24
28
-50
0
50
100
150
200
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.2
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
125°C
BV
DSS
(Normalized)
1.1
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
25°C
1
0.9
0.8
-100
1.0E-05
-50
0
50
100
150
200
0.0
0.4
0.8
1.2
1.6
T
J
(°C)
Figure 5:Break Down vs. Junction Temparature
V
SD
(Volts)
Figure 6: Body-Diode Characteristics(Note E)
3/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
