AOT12N60FD/AOTF12N60FD
600V, 12A N-Channel MOSFET
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆TJ
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
1310
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
110
9
1.8
32
V
GS
=10V, V
DS
=480V, I
D
=12A
1659
166
15.8
3.7
41
8.7
19
34
V
GS
=10V, V
DS
=300V, I
D
=12A,
R
G
=25Ω
I
F
=12A,dI/dt=100A/µs,V
DS
=100V
90
120
82
135
0.5
220
0.8
I
D
=10mA, V
GS
=0V, T
J
=25°C
I
D
=10mA, V
GS
=0V, T
J
=150°C
I
D
=10mA, VGS=0V
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=5V I
D
=250µA
V
GS
=10V, I
D
=6A
V
DS
=40V, I
D
=6A
I
S
=12A,V
GS
=0V
2.4
3
0.51
12
1.3
1.6
12
48
2010
220
23
5.6
50
600
700
0.68
10
100
±100
4
0.65
V
V/
o
C
µA
nΑ
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Total Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=12A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=5A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
2/6
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