AON7934
30V Dual Asymmetric
N-Channel AlphaMOS
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
8V
5V
4.5V
50
40
60
I
D
(A)
ID(A)
4V
125°C
30
25°C
20
20
Vgs=3V
10
0
0
1
2
3
4
5
0
1
2
3
4
5
60
V
DS
=5V
40
0
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
10
9
V
GS
=4.5V
R
DS(ON)
(mΩ)
Ω
8
7
6
V
GS
=10V
5
4
0
9
12
15
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
3
6
Normalized On-Resistance
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.6
V
GS
=10V
I
D
=15A
1.4
1.2
1
17
5
2
V
GS
=4.5V
I
D
=10A
10
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
20
I
D
=15A
15
R
DS(ON)
(mΩ)
Ω
125°C
I
S
(A)
10
1.00E+02
1.00E+01
40
125°C
1.00E+00
25°C
1.00E-01
5
25°C
0
2
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
1.00E-02
1.00E-03
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
7 / 10
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