AON7934
30V Dual Asymmetric
N-Channel AlphaMOS
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=13A
8
Capacitance (pF)
500
400
300
C
oss
200
100
0
0
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
10
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
700
600
C
iss
V
GS
(Volts)
6
4
2
1000.0
100.0
Power (W)
200
160
R
DS(ON)
limited
10µs
100us
1ms
DC
T
J(Max)
=150°C
T
C
=25°C
120
80
40
0
0.01
0.1
1
V
DS
(Volts)
10
100
T
J(Max)
=150°C
T
C
=25°C
I
D
(Amps)
10.0
1.0
0.1
0.0
0.0001
0.001
0.01
0.1
1
10
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=5.4°C/W
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4 / 10
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