AON7902
30V Dual Asymmetric N-Channel MOSFET
General Description
The AON7902 is designed to provide a high efficienc y synchronous buck power stage with optimal layout an d
board space utilization. It includes two specializ ed MOSFETs in a dual Power DFN3.3x3.3A package. The Q1
"High Side" MOSFET is designed to minimize switchin g losses. The Q2 "Low Side" MOSFET use advance trenc h
technology with a monolithically integrated Schotty to provide excellent R
DS(ON)
and low gate charge. The
AON7902 is well suited for use in compact DC/DC converter applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
Q1
30V
27A
<21mΩ
<28mΩ
Q2
30V
40A
<6.2mΩ
<7.4mΩ
100% UIS Tested
100% Rg Tested
Top View
G2
S2
Bottom View
8
1
G1
7
2
D2/S1
6
D1
D1
S2
S2
5
3
4
D1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche Energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
Max Q1
30
±20
24
15
90
8
6
22
24
17
7
1.8
1.1
-55 to 150
Max Q2
±12
40
31
150
13
10
36
65
50
20
1.8
1.1
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
A
mJ
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ Q1
27
60
6
Typ Q2
27
60
2
Max Q1 Max Q2
35
35
72
72
7.5
2.5
Units
°
C/W
°
C/W
°
C/W
1/11
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
